? semiconductor components industries, llc, 2016 november, 2016 ? rev. 2 1 publication order number: mun531335dw1/d mun531335dw1 complementary bias resistor transistors npn - r1=47 k , r2=47 k pnp - r1=2.2 k , r2=47 k npn and pnp transistors with monolithic bias resistor network this series of digital transistors is designed to replace a single device and its external resistor bias network. the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. features ? simplifies circuit design ? reduces board space ? reduces component count ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable ? these devices are pb-free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c, common for q 1 (pnp), unless otherwise noted) rating symbol max unit collector?base voltage v cbo 50 vdc collector?emitter voltage v ceo 50 vdc collector current ? continuous i c 100 madc input forward voltage v in(fwd) 12 vdc input reverse voltage v in(rev) 5 vdc maximum ratings (t a = 25 c, common for q 2 (npn), unless otherwise noted) rating symbol max unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current ? continuous i c 100 madc input forward voltage v in(fwd) 40 vdc input reverse voltage v in(rev) 10 vdc stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www. onsemi.com marking diagram pin connections aj m 1 6 aj = specific device code m = date code* = pb-free package (note: microdot may be in either location) *date code orientation may vary depending up- on manufacturing location. sot?363 case 419b q 1 q 2 (1) (2) (3) (6) (5) (4) r 1 r 2 r 2 r 1 device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NSVMUN531335DW1T1G sot?363 (pb?free) 3000 / tape & reel nsvmun531335dw1t3g sot?363 (pb?free) 10000 / tape & ree l
mun531335dw1 www. onsemi.com 2 thermal characteristics characteristic symbol max unit mun531335dw1 (sot?363) one junction heated total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 187 256 1.5 2.0 mw mw/ c thermal resistance, (note 1) junction to ambient (note 2) r ja 670 490 c/w mun531335dw1 (sot?363) both junction heated (note 3) total device dissipation t a = 25 c (note 1) (note 2) derate above 25 c (note 1) (note 2) p d 250 385 2.0 3.0 mw mw/ c thermal resistance, junction to ambient (note 1) (note 2) r ja 493 325 c/w thermal resistance, junction to lead (note 1) (note 2) r jl 188 208 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad. 2. fr?4 @ 1.0 1.0 inch pad. 3. both junction heated values assume total power is sum of two equally powered channels.
mun531335dw1 www. onsemi.com 3 electrical characteristics (t a = 25 c, common for q 1 (pnp)) characteristic symbol min typ max unit off characteristics collector?base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector?emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter?base cutoff current (v eb = 6.0 v, i c = 0) i ebo ? ? 0.2 madc collector?base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector?emitter breakdown voltage (note 4) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics dc current gain (note 4) (i c = 5.0 ma, v ce = 10 v) h fe 80 140 ? collector?emitter saturation voltage (note 4) (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc input voltage (off) (v ce = 5.0 v, i c = 100 a) v i(off) ? 0.6 ? vdc input voltage (on) (v ce = 0.2 v, i c = 5.0 ma) v i(on) ? 0.8 ? vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 1.5 2.2 2.9 k resistor ratio r 1 /r 2 0.038 0.047 0.056 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulsed condition: pulse width = 300 msec, duty cycle 2%.
mun531335dw1 www. onsemi.com 4 electrical characteristics (t a =25 c, common for q 2 (npn)) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb =50v, i e =0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce =50v, i b =0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0 v, i c =0) i ebo ? ? 0.1 madc collector-base breakdown voltage (i c =10 a, i e =0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 5) (i c = 2.0 ma, i b =0) v (br)ceo 50 ? ? vdc on characteristics dc current gain (note 5) (i c = 5.0 ma, v ce =10v) h fe 80 140 ? collector-emitter saturation voltage (note 5) (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 v input voltage (off) (v ce = 5.0 v, i c = 100 a) v i(off) ? 1.2 ? vdc input voltage (on) (v ce = 0.2 v, i c = 3.0 ma) v i(on) ? 1.9 ? vdc output voltage (on) (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 32.9 47 61.1 k resistor ratio r 1 /r 2 0.8 1.0 1.2 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. pulsed condition: pulse width = 300 ms, duty cycle 2%. figure 1. derating curve ambient temperature ( c) 125 100 75 50 25 0 ?25 ?50 0 50 100 150 200 250 300 p d , power dissipation (mw) 150 1.0 1.0 inch pad 350 400
mun531335dw1 www. onsemi.com 5 typical characteristics ? pnp transistor f = 10 khz i e = 0 a t a = 25 c 7 010 20304050 150 c 25 c ?55 c figure 2. v ce(sat) vs. i c figure 3. dc current gain figure 4. output capacitance figure 5. output current vs. input voltage v in , input voltage (v) v r , reverse bias voltage (v) figure 6. input voltage vs. output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 10 0 10 1 1000 10 1 0.01 v ce(sat) , collector?emitter voltage (v) h fe , dc current gain c ob , capacitance (pf) 100 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 100 30 20 10 0 0.1 1 40 50 v in , input voltage (v) 0.01 0.1 30 100 v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v 25 c 150 c ?55 c 6 5 4 3 2 1 0 25 c ?55 c 150 c 25 c ?55 c 150 c 10
mun531335dw1 www. onsemi.com 6 typical characteristics ? npn transistor figure 7. v ce(sat) vs. i c 024681 0 100 10 1 0.1 0.01 0.001 v in , input voltage (v) t a = ?25 c 75 c 25 c figure 8. dc current gain figure 9. output capacitance 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 10. output current vs. input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 25 c 75 c 50 0 10203040 3.2 2.8 1.2 0.8 0.4 0 v r , reverse voltage (v) figure 11. input voltage vs. output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce = 10 v f = 10 khz i e = 0 a t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a = ?25 c t a = ?25 c v ce(sat) , collector?emitter voltage (v) h fe , dc current gain 1.6 2.0 2.4 c ob , output capacitance (pf) i c , collector current (ma) v in , input voltage (v)
mun531335dw1 www. onsemi.com 7 package dimensions sc?88/sc70?6/sot?363 case 419b?02 issue y notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mun531335dw1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ?
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